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| AP9971GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance Single Drive Requirement Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 36m 25A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 25 16 80 39 0.31 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.2 62.5 110 Unit /W /W /W 1 200902243 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9971GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.5V, ID=12A VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=60V, VGS=0V VGS= +20V, VDS=0V ID=18A VDS=48V VGS=4.5V VDS=30V ID=18A RG=3.3,VGS=10V RD=1.67 VGS=0V VDS=25V f=1.0MHz Min. 60 1 - Typ. 0.05 17 18 6 11 9 24 26 7 160 110 Max. Units 36 50 3 1 250 +100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1700 2700 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=25A, VGS=0V IS=18A, VGS=0V, dI/dt=100A/s Min. - Typ. 37 38 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GH/J 100 70 T C =25 C 80 o 10V 7.0V ID , Drain Current (A) 5.0V T C =150 C 60 o 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 50 60 4.5V 40 30 40 20 20 V G =3.0V 0 0 1 2 3 4 5 V G =3.0V 10 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 2.5 I D = 18 A T C =25 o C 2.0 I D =18A V G =10V 35 Normalized RDS(ON) RDS(ON) (m) 1.5 1.0 30 0.5 0.31 25 0.0 3 5 7 9 11 -50 0 50 100 trr Qrr 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.6 20 16 2.2 12 VGS(th) (V) 1.4 o T j =150 C T j =25 o C 1.8 IS(A) 8 1.4 4 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GH/J f=1.0MHz 14 10000 I D =18A 12 VGS , Gate to Source Voltage (V) 10 8 V DS =30V V DS =38V V DS =48V C (pF) C iss 1000 6 100 4 C oss C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10us 100us 1ms 10ms 1 10 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 0.1 0.05 PDM 0.02 0.01 100ms DC T C =25 o C Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.1 0.1 1 10 100 1000 0.01 0.00001 0.31 0.0001 0.001 0.01 0.1 trr Qrr 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 |
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